TOKYO, Kioxia Corporation, a world leader in memory solutions, today announced that it has begun mass production of the industry’s first1 Universal Flash Storage (UFS)2 Ver. 4.0 embedded flash memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology.
QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in controller technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance. Kioxia’s new 512 Gigabyte (GB) QLC UFS achieves sequential read speeds of up to 4,200 megabytes per second (MB/s) and sequential write speeds of up to 3,200 MB/s, taking full advantage of the UFS 4.0 interface speed.
Source: BERNAMA News Agency
