Tokyo: Toshiba Electronic Devices and Storage Corporation has unveiled three new 650V silicon carbide (SiC) MOSFETs. These are equipped with Toshiba's latest 3rd generation SiC MOSFET chips and are housed in surface-mount TOLL packages. The MOSFETs, named 'TW027U65C,' 'TW048U65C,' and 'TW083U65C,' are designed for industrial equipment applications, including switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of these MOSFETs commence today.

According to BERNAMA News Agency, the new products are Toshiba's 3rd generation SiC MOSFETs in a surface-mount TOLL package. This design reduces device volume by over 80% compared to traditional through-hole packages like TO-247 and TO-247-4L(X) and enhances equipment power density.